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Samsung 990 EVO Plus 4TB PCIe Gen 4 NVMe M.2 SSD - 7,250MB/s Read, 6,300MB/s Write, V-NAND TLC, AES 256-bit Encryption, 5-Year Warranty
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SKU: mz-v9s4t0bw

Availability: In Stock

Brand: Samsung

Category: Solid State Drives (SSD)

$1,509.00


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Description
SPECIFICATION
Review

Samsung 990 EVO Plus 4TB PCIe Gen 4 NVMe M.2 SSD delivers top-tier storage performance ideal for content creators, gamers, and power users seeking ultra-fast and reliable SSD technology. This M.2 (2280) form factor drive features PCIe® Gen 4.0 x4 interface with backward compatibility for PCIe® Gen 5.0 x2, maximizing speed and future-proofing your system.

Experience lightning-fast sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s, with random IOPS performance reaching ~1,050K read and ~1,400K write at QD32, enabling rapid load times and seamless multitasking.

The SSD utilizes Samsung's latest V-NAND TLC technology and a proprietary controller optimized for endurance and efficiency. With Intelligent TurboWrite 2.0 technology and an enlarged TurboWrite buffer, this drive enhances write performance during large file transfers.

Designed as a DRAM-less model with Host Memory Buffer (HMB) support, it offers excellent power efficiency and thermal management, further improved by a nickel-coated heat shield. Robust security features include AES 256-bit full-disk encryption, TCG/Opal, and IEEE1667 compliance, safeguarding your data.

Rated for 2400 TBW endurance and boasting an MTBF of approximately 1.5 million hours, the Samsung 990 EVO Plus is backed by a 5-year limited warranty, ensuring reliability and peace of mind.

Key form factor and environmental specs: dimensions 80.15 x 22.15 x 2.38 mm, max weight ~9.0g, and operating temperature range of 0–70 °C.

Upgrade your PC storage with the Samsung 990 EVO Plus 4TB SSD for unmatched performance, durability, and security.

Environmental

Operating Temperature0\u00b0C to 70\u00b0C

Physical

WeightApprox. 9.0 g
weight_grams9
Form FactorM.2 2280
Form FactorM.2 2280

Technical

NVMe VersionNVMe 2.0
NAND TypeSamsung V-NAND TLC
Capacity4TB
capacity_gb4000
NAND TypeSamsung V-NAND TLC
Backward CompatibilityCompatible with PCIe Gen 4.0 and PCIe Gen 5.0 x2
FeaturesV-NAND TLC, AES 256-bit full-disk encryption, Host Memory Buffer (DRAM-less design), TCG/Opal, IEEE1667
InterfacePCIe Gen 4.0 x4,compatible with PCIe Gen 5.0 x2

Performance

CacheHost Memory Buffer (DRAM-less design)
Sequential Write SpeedUp to 6,300 MB/s
Sequential Read SpeedUp to 7,250 MB/s
Random 4K Read IOPS1050000
Random 4K Write IOPS1400000
sequential_write_mbs6300

General

Dimensions (WxHxD)80.15 x 22.15 x 2.38 mm
MTBF1.5 million hours
Random Write IOPS (QD32)~1,400,000 IOPS
Random Read IOPS (QD32)~1,050,000 IOPS
ProtocolNVMe 2.0
Endurance2400 TBW
sequential_read_mbs7250

Security

EncryptionAES 256-bit full-disk,TCG/Opal,IEEE1667

Identifiers

Model NumberMZ-V9S4T0BW

Environment

operating_temperature_c0\u00b0C to 70\u00b0C

Classification

Drive TypePCIe NVMe SSD

Identification

Part NumberMZ-V9S4T0BW

Durability

Endurance (TBW)2400

Reliability

mtbf_variantMean Time Between Failures (MTBF)
mtbf_hours1500000

Warranty

Warranty (years)5

Support

Warranty5-year limited warranty or TBW limit

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